Thin-film solar cells based on tin sulfide have captured attention in the field of photovoltaics. Thissemiconductor material, abundant and environmentally friendly, holds the potential to enableefficient solar cells and modules while remaining cost-effective, making it particularly well-suitedfor photovoltaic applications. In this research, SnS solar cells with interfaces of p-SnS/CdS and CdS/n-ZnO have been simulated using the SCAPS-1D software. Key parameters, such as thethickness of absorbing and dielectric layers, band gap, defect density, and interface defect density, are fine-tuned to maximize solar cell efficiency. The photovoltaic cell configuration adhered to the sequence p-SnS/CdS/n-ZnO, including the SnS absorber layer, the CdS buffer layer, and a ZnO window layer. Through meticulous parameter optimization and adjustments to layer thicknesses, theresearch yielded impressive results. These include a maximum efficiency of 7.55%, a short-circuitcurrent of 24.53 mA/cm², a fill factor of 63.15%, and an open-circuit voltage of 0.49 V. Simulationstudies examining changes in various solar cell parameters revealed that enhancing the thickness ofthe absorber layer is associated with improved efficiency. Furthermore, quantum efficienciesranging from 90% to 100% were demonstrated at visible wavelengths (from 350 nm to 770 nm).This work presents a novel simulation-based optimization of SnS heterojunction solar cells, including a detailed study of interface and bulk defects. These findings provide fresh insight into thedesign of efficient SnS-based devices, a topic rarely addressed in previous numerical studies.