Speakers - 2026

Title: Theoretical study of the evolution of mesh disagreement rate of heterostructures based on gasb, ga1-xinxsb, and ga1-xalxsb, and the determination of the critical thickness of ga1-xinxsb, and ga1-xalxsb epitaxies layers

Abstract

III-antimonides are a very good technical solution for near-infrared photodetection and are at the same time flexible, reliable and very well suited to the entire range of near-infrared applications. However, losses through recombination at the surface of emitters and at interfaces constitute a brake on the development of heterostructures based on these materials. To provide answers to these performance losses of these heterostructures, our team is working to optimize the choice of alloys and substrates. In this paper, we aim to determine the x of aluminum or indium composition of Ga1-xInxSb and Ga1-xAlxSb alloys, for a disagreement rate with respect to the GaSb substrate sufficiently low to neglect recombinations at the interfaces. The aim of this article is to enable us to optimize our modelings of the heterojunctions based on these materials. The results showed that, the practical interest of heterostructures based on III-Sb antimonides and their alloys (Ga1-xInxSb and Ga1-xAlxSb) lies in the control of the composition x in indium (In) or aluminum (Al) and the good mesh parameter which allows to reduce mesh disagreement and, consequently, the resulting constraints. The evolution of the mesh disagreement rate shows that, the binary GaSb remains a good substrate for the ternaries Ga1-xInxSb and Ga1-xAlxSb with an indium (In) or aluminum x composition lower than 30%. However, the low critical thicknesses (less than 2µm) of Ga1-xInxSb show the complexity of producing this layer, while the critical thickness of Ga1-xAlxSb can reach 10µm for an aluminum (Al) x composition equal to 8%.